![]() ![]() In particular, we highlight the major breakthroughs of FPSCs made in 2019/2020 for both laboratory and large-scale devices. After a brief introduction, the major features of FPSCs are compared with other types of flexible solar cells in a broad context including silicon, CdTe, dye-sensitized, organic, quantum dot and hybrid solar cells. In this article, we comprehensively review the recent progress of FPSCs. However, compared with rigid counterparts, the efficiency record of flexible perovskite solar cells (FPSCs) is advancing slowly, and therefore it is of great significance to scrutinize recent work and expedite the innovation in this field. The significant advancement of PSCs has been realized through various routes, including perovskite composition engineering, interface modification, surface passivation, fabrication process optimization, and exploitation of new charge transport materials. To date, PSCs have achieved a certified PCE of 25.2% on rigid conductive substrates, and 19.5% on flexible substrates. Perovskite solar cells (PSCs) have emerged as a ‘rising star’ in recent years due to their high-power conversion efficiency (PCE), extremely low cost and facile fabrication techniques. Comparison with recently published experimental and theoretical data obtained for mid-infrared GaAs/AlxGa1−xAs multiple quantum well systems leads us to the conclusion that the dominant role of interface roughness scattering at low temperature is a general feature of a wide range of semiconductor heterostructures not limited to IV-IV materials. By comparing our results obtained for two different structures we deduce that in this regime both barrier and well widths play an important role in the determination of the carrier lifetime. p model and a time-domain rate equation scheme, that, for the interface quality currently achievable experimentally (with an average step height 1 greater than or equal to Å), interface roughness will dominate all other scattering processes up to about 200 K. ![]() ![]() We show both experimentally and theoretically, using a six-band k We report the direct determination of nonradiative lifetimes in Si/SiGe asymmetric quantum well structures designed to access spatially indirect (diagonal) interwell transitions between heavy-hole ground states, at photon energies below the optical phonon energy. ![]()
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